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    Shedding a New Light on Faster Computer Memory Devices  

    In an article published online today in Science Advances, a team of scientists from Arizona State University's School of Molecular Sciences and Germany explain how a particular phase-change memory (PCM) material can work a thousand times faster than current flash computer memory, while being significantly more durable with respect to the number of daily read-writes.  


    "PCMs are a form of computer random-access memory (RAM) that store data by altering the state of the matter of the "bits" (millions of which make up the device) between liquid, glass and crystal states. PCM technology has the potential to provide inexpensive, high-speed, high-density, high-volume, nonvolatile storage on an unprecedented scale.

    The basic idea and material were invented by Stanford Ovshinsky in 1975, but applications have lingered due to lack of clarity about how the material can execute the phase changes on such short time scales and technical problems related to controlling the changes with necessary precision. Now high-tech companies like Samsung, IBM and Intel are racing to perfect it."

    Read the full article here: https://www.sciencedaily.com/releases/2018/11/181130175102.htm
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